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Faculty of Mathematics, Physics and Informatics, Comenius University Bratislava

Effect of chemical reaction stoichiometry on the pressure variation in the etch chamber during etching of aluminium

Martišovitš V., Zahoran M., Košinár I., Trnovec J.
Physics Letters A 173 (6), 462 (1993)

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Abstract:

Citations:

1.)	Beale, D. - Siu, S. - Patrick, R. : In: Trends in aluminum etch rate uniformity in a commercial inductively coupled plasma etch system. Journal of Vacuum Science & Technology B, Vol. 16, No. 3, 1998. s. 1059-1067 - SCI (1998) -------------